型号:

SI2304DS,215

RoHS:无铅 / 符合
制造商:NXP Semiconductors描述:MOSFET N-CH 30V 1.7A SOT23
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
SI2304DS,215 PDF
标准包装 1
系列 TrenchMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 1.7A
开态Rds(最大)@ Id, Vgs @ 25° C 117 毫欧 @ 500mA,10V
Id 时的 Vgs(th)(最大) 2V @ 1mA
闸电荷(Qg) @ Vgs 4.6nC @ 10V
输入电容 (Ciss) @ Vds 195pF @ 10V
功率 - 最大 830mW
安装类型 表面贴装
封装/外壳 TO-236-3,SC-59,SOT-23-3
供应商设备封装 TO-236AB
包装 剪切带 (CT)
其它名称 568-5957-1
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